Characterization of Nonlinear Device Capacitance in Frequency Domain
نویسندگان
چکیده
This paper formulates a simple matrix-based solution to estimate the voltage-dependent capacitance of a weakly nonlinear device at microwave and millimeter wave frequencies. Unlike other approaches, which rely on the direct capacitance measurement at different bias voltages, the proposed technique generates a large signal model for the capacitance directly from the frequency domain measurement and the known I-V characteristic. The resulting capacitance versus voltage characteristic can be incorporated as a simulation model into a microwave system design for harmonic balance simulation. Measurement of the capacitance of a highly nonlinear device using this approach agrees with the results of harmonic balance simulation for microwave and millimeter wave frequencies.
منابع مشابه
Nonlinear Analysis of Nonlinearly Loaded Dipole Antenna in the Frequency Domain Using Fuzzy Inference
In this paper, inference model is proposed so as to analyze nonlinearly loaded dipole antenna. In modeling process, linear and nonlinear behavior of the problem is saved as simple and unchanged membership functions and the effect of incident wave on the induced voltage at different harmonies are then extracted easily. Consequently the model achieved is more efficient than previous studies using...
متن کاملBallistic Electron Transport in Nanoscale Three-Branch Junctions
Presented here is an experimental study on a novel electron device utilizing ballistic electron transport. This device is a three-terminal structure comprised of lithographically defined Y-shaped two-dimensional electron gas (2DEG) in a compound semiconductor heterostructure. Ballistic electron transport causes a nonlinear input-output transfer curve, which can be exploited for signal rectifica...
متن کاملReevaluation of Performance of Electric Double-layer Capacitors from Constant-current Charge/Discharge and Cyclic Voltammetry
The electric characteristics of electric-double layer capacitors (EDLCs) are determined by their capacitance which is usually measured in the time domain from constant-current charging/discharging and cyclic voltammetry tests, and from the frequency domain using nonlinear least-squares fitting of spectral impedance. The time-voltage and current-voltage profiles from the first two techniques are...
متن کاملمعرفی و شبیه سازی روش جدید اندازه گیری ضریب تلفات عایقی و پرمتیویته نسبی
For evaluating quality of electrical insulation, it is necessary to measure the property of insulators. Dielectric constant and loss tangent (tans) are two important parameters for determining the property of insulator. The measurement of above parameters is normally based on the time- domain and frequency-domain, which is costly and time consuming. In this study a multiple-frequency binary se...
متن کاملModification of the CBCM Method
This paper deals with a modification of the CBCM method for floating nonlinear device characterization. Closed form analytical formulae for the estimation of CBCM errors due to parasitic charge injection are presented. A test chip implementing the method was designed and manufactured in the 0.35μm CMOS process. Key-Words: Charge-Based Capacitance Measurements, MOS characterization, Test Structures
متن کامل